In:
ECS Transactions, The Electrochemical Society, Vol. 50, No. 8 ( 2013-03-15), p. 203-208
Abstract:
This study examined the effects of the indium fraction in indium zinc oxide (IZO) on the performance and stability of IZO thin film transistors (TFTs). The field-effect mobility and sub-threshold swing were much improved with increasing In fraction; 41.0 cm2/Vs and 0.2 V/decade, respectively, at 85 at% In, compared to 1.1 cm2/Vs and 2.4 V/decade of ZnO TFTs. In contrast, a local minimum negative bias illumination stress instability was observed near 73~77 at% In. This behavior was explained by a poly-crystalline to amorphous phase transition in IZO thin films.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/05008.0203ecst
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2013
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