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  • AIP Publishing  (65)
  • 1
    Online Resource
    Online Resource
    Weak localization in ultrananocrystalline diamond
    AIP Publishing ; 2006
    In:  Applied Physics Letters Vol. 88, No. 9 ( 2006-02-27)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 88, No. 9 ( 2006-02-27)
    Abstract: In this letter we present results of magnetotransport measurements, carried out on heavily nitrogen-doped ultrananocrystalline diamond films, prepared by plasma-enhanced chemical vapor deposition. This material having at room temperature appreciably high electric conductivity (∼4200Sm−1) revealed surprisingly at Kelvin temperatures a giant negative magnetoresistance reaching up to 22% at 1.28K and at 8T. The analysis of experimental data has borne evidence of the fact that the transport in this subsystem has a character of low-dimensional disordered metal and it is controlled by quantum interference effects of electrons resulting in their weak localization.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2176853
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2006
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Characterization of nanocrystalline diamond films by core-level photoabsorption
    AIP Publishing ; 1996
    In:  Applied Physics Letters Vol. 68, No. 12 ( 1996-03-18), p. 1640-1642
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 68, No. 12 ( 1996-03-18), p. 1640-1642
    Abstract: Core-level photoabsorption has been used to determine the sp2 and sp3 bonding content of nanocrystalline diamond thin films grown using C60 or CH4 precursors. The C(1s) absorption spectra show clear bulk diamond excitonic and sp3 features with little evidence of sp2 bonding, while the Raman spectra measured from these same films are ambiguous and indeterminate. This result can be attributed to the local structure (near-neighbor bonding) sensitivity of core-level photoabsorption that is insensitive to domain size, unlike Raman spectroscopy.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.115677
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    Synthesis and electron field emission of nanocrystalline diamond thin films grown from N2/CH4 microwave plasmas
    AIP Publishing ; 1997
    In:  Journal of Applied Physics Vol. 82, No. 9 ( 1997-11-01), p. 4546-4550
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 82, No. 9 ( 1997-11-01), p. 4546-4550
    Abstract: Nanocrystalline diamond films have been synthesized by microwave plasma enhanced chemical vapor deposition using N2/CH4 as the reactant gas without additional H2. The nanocrystalline diamond phase has been identified by x-ray diffraction and transmission electron microscopy analyses. High resolution secondary ion mass spectroscopy has been employed to measure incorporated nitrogen concentrations up to 8×1020 atoms/cm3. Electron field emission measurements give an onset field as low as 3.2 V/μm. The effect of the incorporated nitrogen on the field emission characteristics of the nanocrystalline films is discussed.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.366190
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 4
    Online Resource
    Online Resource
    Fracture strength of ultrananocrystalline diamond thin films—identification of Weibull parameters
    AIP Publishing ; 2003
    In:  Journal of Applied Physics Vol. 94, No. 9 ( 2003-11-01), p. 6076-6084
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 94, No. 9 ( 2003-11-01), p. 6076-6084
    Abstract: The fracture strength of ultrananocrystalline diamond (UNCD) has been investigated using tensile testing of freestanding submicron films. Specifically, the fracture strength of UNCD membranes, grown by microwave plasma chemical vapor deposition (MPCVD), was measured using the membrane deflection experiment developed by Espinosa and co-workers. The data show that fracture strength follows a Weibull distribution. Furthermore, we show that the Weibull parameters are highly dependent on the seeding process used in the growth of the films. When seeding was performed with microsized diamond particles, using mechanical polishing, the stress resulting in a probability of failure of 63% was found to be 1.74 GPa, and the Weibull modulus was 5.74. By contrast, when seeding was performed with nanosized diamond particles, using ultrasonic agitation, the stress resulting in a probability of failure of 63%, increased to 4.13 GPa, and the Weibull modulus was 10.76. The tests also provided the elastic modulus of UNCD, which was found to vary from 940 to 970 GPa for both micro- and nanoseeding. The investigation highlights the role of microfabrication defects on material properties and reliability, as a function of seeding technique, when identical MPCVD chemistry is employed. The parameters identified in this study are expected to aid the designer of microelectromechanical systems devices employing UNCD films.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.1613372
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2003
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 5
    Online Resource
    Online Resource
    Thermoelectric power factors of nanocarbon ensembles as a function of temperature
    AIP Publishing ; 2009
    In:  Journal of Applied Physics Vol. 105, No. 7 ( 2009-04-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 105, No. 7 ( 2009-04-01)
    Abstract: Thermoelectric power factors of nanocarbon ensembles have been determined as a function of temperature from 400 to 1200 K. The ensembles, composed of mixtures of nanographite or disperse ultrananocrystalline diamond with B4C, are formed into mechanically rigid compacts by reaction at 1200 K with methane gas and subsequently annealed in an argon atmosphere at temperatures up to 2500 K. The ensembles were characterized using scanning electron microscopy, Raman, x-ray diffraction, and high resolution transmission electron microscopy techniques and found to undergo profound nanostructural changes as a function of temperature while largely preserving their nanometer sizes. The power factors increase strongly both as a function of annealing temperature and of the temperature at which the measurements are carried out reaching 1 μW/K2 cm at 1200 K without showing evidence of a plateau. Density functional “molecular analog” calculations on systems based on stacked graphene sheets show that boron substitutional doping results in a lowering of the Fermi level and the creation of a large number of hole states within thermal energies of the Fermi level [P. C. Redfern, D. M. Greun, and L. A. Curtiss, Chem. Phys. Lett. 471, 264 (2009)] . We propose that enhancement of electronic configurational entropy due to the large number of boron configurations in the graphite lattice contributes to the observed thermoelectric properties of the ensembles.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3103244
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2009
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 6
    Online Resource
    Online Resource
    Optical properties of nanocrystalline diamond thin films
    AIP Publishing ; 2006
    In:  Applied Physics Letters Vol. 88, No. 10 ( 2006-03-06)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 88, No. 10 ( 2006-03-06)
    Abstract: The optical properties of nanocrystalline diamond films grown from a hydrogen-rich CH4∕H2 gas phase by hot filament chemical vapor deposition, as well as from an argon-rich Ar∕CH4 gas phase by microwave plasma enhanced chemical vapor deposition, are reported. The influence of nitrogen incorporation on the optical absorption is investigated. The diamond films are characterized by photothermal deflection spectroscopy and temperature dependent spectrally resolved photoconductivity. An onset of absorption at about 0.8eV in undoped films is attributed to transitions from π to π states introduced into the band gap by the high amount of sp2 bonded carbon at the grain boundaries. Incorporation of nitrogen leads to a strong absorption in the whole energy spectrum, as a result of the increasing number of sp2 carbon atoms. The effect of surface states has been observed in the high energy region of the spectrum. Transitions to the conduction band tail and photothermal ionization processes account for the observed onset at 4.4eV. Photocurrent quenching at about 3.3eV is observed in the case of samples grown from a hydrogen-rich CH4∕H2 gas phase.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2183366
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2006
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 7
    Online Resource
    Online Resource
    Ultrasensitive coherent Raman technique with picosecond lasers
    AIP Publishing ; 1987
    In:  Applied Physics Letters Vol. 50, No. 7 ( 1987-02-16), p. 371-373
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 50, No. 7 ( 1987-02-16), p. 371-373
    Abstract: The use of picosecond, Q-switched lasers and advanced polarization schemes has led to the development of a coherent Raman technique with the sensitivity of coherent anti-Stokes Raman spectroscopy experiments but without the troublesome phase-matching requirements. Experiments in dilute solutions of benzene indicate a limit of sensitivity for the current apparatus of 2.5×10−4 M in two minutes of signal averaging over 150 cm−1. Possible applications to the in situ study of passive films and thin films on transparent media are discussed.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.98202
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1987
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 8
    Online Resource
    Online Resource
    Control of diamond film microstructure by Ar additions to CH4/H2 microwave plasmas
    AIP Publishing ; 1998
    In:  Journal of Applied Physics Vol. 84, No. 4 ( 1998-08-15), p. 1981-1989
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 84, No. 4 ( 1998-08-15), p. 1981-1989
    Abstract: The transition from microcrystalline to nanocrystalline diamond films grown from Ar/H2/CH4 microwave plasmas has been investigated. Both the cross-section and plan-view micrographs of scanning electron microscopy reveal that the surface morphology, the grain size, and the growth mechanism of the diamond films depend strongly on the ratio of Ar to H2 in the reactant gases. Microcrystalline grain size and columnar growth have been observed from films produced from Ar/H2/CH4 microwave discharges with low concentrations of Ar in the reactant gases. By contrast, the films grown from Ar/H2/CH4 microwave plasmas with a high concentration of Ar in the reactant gases consist of phase pure nanocrystalline diamond, which has been characterized by transmission electron microscopy, selected area electron diffraction, and electron energy loss spectroscopy. X-ray diffraction and Raman spectroscopy reveal that the width of the diffraction peaks and the Raman bands of the as-grown films depends on the ratio of Ar to H2 in the plasmas and are attributed to the transition from micron to nanometer size crystallites. It has been demonstrated that the microstructure of diamond films deposited from Ar/H2/CH4 plasmas can be controlled by varying the ratio of Ar to H2 in the reactant gas. The transition becomes pronounced at an Ar/H2 volume ratio of 4, and the microcrystalline diamond films are totally transformed to nanocrystalline diamond at an Ar/H2 volume ratio of 9. The transition in microstructure is presumably due to a change in growth mechanism from CH3⋅ in high hydrogen content to C2 as a growth species in low hydrogen content plasmas.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.368331
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 9
    Online Resource
    Online Resource
    Synthesis of nanocrystalline diamond thin films from an Ar–CH4 microwave plasma
    AIP Publishing ; 1998
    In:  Journal of Applied Physics Vol. 83, No. 1 ( 1998-01-01), p. 540-543
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 83, No. 1 ( 1998-01-01), p. 540-543
    Abstract: Nanocrystalline diamond thin films have been synthesized in an Ar–CH4 microwave discharge, without the addition of molecular hydrogen. X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy characterizations show that the films consist of a pure crystalline diamond phase with very small grain sizes ranging from 3 to 20 nm. Atomic force microscopy analysis demonstrates that the surfaces of the nanocrystalline diamond films remain smooth independent of the film thicknesses. Furthermore, the reactant gas pressure, which strongly affects the concentration of C2 dimer in the Ar–CH4 plasma as well as the growth rate of the films, has been found to be a key parameter for the nanocrystalline diamond thin film depositions.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.366668
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 10
    Online Resource
    Online Resource
    Low voltage electron emission from calcium carbonate whiskers coated with a thin layer of gold
    AIP Publishing ; 1997
    In:  Journal of Applied Physics Vol. 82, No. 8 ( 1997-10-15), p. 4051-4054
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 82, No. 8 ( 1997-10-15), p. 4051-4054
    Abstract: Cold cathode electron field emission from aragonite CaCO3 whiskers coated with 10-nm-thick gold has been observed. The microstructure of the whiskers grown on a Ni substrate by electrochemical deposition has been examined by scanning electron microscope, energy dispersive x-ray spectrometer, x-ray diffraction spectrometer, and Raman spectroscopy. For a 220 μm anode-cathode gap, emission current densities in excess of ∼2×10−6 A/cm2 are observed for applied voltages of 660 V or greater. Although it is believed that the electric field is locally enhanced by the geometry of the whiskers, the voltage required increases roughly linearly with the anode-cathode spacing, corresponding to a turn-on field of approximately 3 V/μm, and an emission current density of 0.4 mA/cm2 has been obtained for an applied field of 5.5 V/μm.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.365714
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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