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  • AIP Publishing  (10)
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  • AIP Publishing  (10)
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  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 2021
    In:  Physics of Fluids Vol. 33, No. 3 ( 2021-03-01)
    In: Physics of Fluids, AIP Publishing, Vol. 33, No. 3 ( 2021-03-01)
    Abstract: Waveform deformation and breaking are widespread phenomena when internal solitary waves (ISWs) encounter changing topographies, which have been observed in many parts of oceans. In this study, experiments are performed in a series of combinations of bottom step topographies with different heights and ISWs in different amplitudes within a two-layer stratified fluid system. According to experimental results, the evolution processes of ISWs over the bottom step are classified into four typical regimes as the wave–step interaction varying from weak to strong, which are the transmission regime, transitional regime, breaking regime, and reflection regime, corresponding to the evolution patterns of steady passage, deformation, breaking, and strong reflection, respectively. To describe the intensity of wave–step interaction, a new improved interaction parameter is proposed, which takes both relative amplitude of ISWs and relative topography changes into consideration, and achieved better effectiveness in defining the boundaries between different regimes. In terms of energy properties, with the wave–step interaction becoming stronger, the transmission ratio keeps decreasing throughout all regimes, while the reflection wave starts to appear since the breaking regime and its energy keeps increasing. At the critical point between the breaking regime and reflection regime, the reflection ratio equals the transmission ratio, and the energy loss ratio reaches its maximum.
    Type of Medium: Online Resource
    ISSN: 1070-6631 , 1089-7666
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 1472743-2
    detail.hit.zdb_id: 241528-8
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 121, No. 5 ( 2022-08-01)
    In: Applied Physics Letters, AIP Publishing, Vol. 121, No. 5 ( 2022-08-01)
    Abstract: We theoretically study the interference and propagation of phonon polaritons in hexagonal boron nitride (hBN) in van der Waals heterostructures composed of hBN and twisted bilayer graphene (TBG) with different interlayer spacing in TBG. We show that varying the interlayer spacing and, hence, the interlayer coupling strength results in dramatic modifications of the local optical conductivity at the domain walls (DWs) in TBG, which leads to significant changes in the polariton interference profile near DWs. Moreover, our simulation reveals that the two-dimensional near-field interference pattern generated by polariton propagation in hBN/TBG heterostructures can be dramatically changed by interlayer spacing and the superlattice period. Our study demonstrates that combining interlayer spacing modification with moiré superlattices is a valuable route to control light at the nanoscale and design nanophotonic devices with tunable functionalities.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    AIP Publishing ; 2016
    In:  Journal of Applied Physics Vol. 119, No. 18 ( 2016-05-14)
    In: Journal of Applied Physics, AIP Publishing, Vol. 119, No. 18 ( 2016-05-14)
    Abstract: In this work, a dual-band and high-efficiency reflective cross-polarization converter based on an anisotropic metasurface for linearly polarized electromagnetic waves is proposed. Its unit cell is composed of an elliptical disk-ring mounted on grounded dielectric substrate, which is an anisotropic structure with a pair of mutually perpendicular symmetric axes u and v along ±45° directions with respect to y-axis direction. Both the simulation and measured results show that the polarization converter can convert x- or y-polarized incident wave to its cross polarized wave in the two frequency bands (6.99–9.18 GHz, 11.66–20.40 GHz) with the conversion efficiency higher than 90%; moreover, the higher frequency band is an ultra-wide one with a relative bandwidth of 54.5% for multiple plasmon resonances. In addition, we present a detailed analysis for the polarization conversion of the polarization converter, and derive a formula to calculate the cross- and co-polarization reflections at y-polarized incidence according to the phase differences between the two reflected coefficients at u-polarized and v-polarized incidences. The simulated, calculated, and measured results are all in agreement with the entire frequency regions.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 4
    In: Physics of Plasmas, AIP Publishing, Vol. 25, No. 6 ( 2018-06-01)
    Abstract: Humidity is a critical factor in atmospheric corona discharge. Fluid dynamics models have become a common method to explore the detailed corona discharge characteristics in humid air. However, the models require the specification of some key parameters, such as electron swarm parameters and Townsend coefficients, which strongly depend on the electron energy distribution function (EEDF). In this paper, the EEDFs of dry air and water vapor are compared by solving the electron Boltzmann equation using classical the two-term approximation. Moreover, electron drift velocity in dry air and water vapor are compared and validated. Finally, effects of humidity on the electron swarm parameters and Townsend coefficients are also discussed. The results show that the electron drift velocity in dry air and water vapor in this paper is well consistent with the previous experimental results for a wide range. It is concluded that the humidity could increase the electron mobility coefficient and decrease the electron diffusion coefficient in low reduced electric field, which are insensitive to humidity in high reduced electric field. The strength of ionization and attachment reactions are both enhanced by humidity, and the corona onset electric fields increase with the increase in humidity.
    Type of Medium: Online Resource
    ISSN: 1070-664X , 1089-7674
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 1472746-8
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  • 5
    Online Resource
    Online Resource
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 111, No. 13 ( 2017-09-25)
    In: Applied Physics Letters, AIP Publishing, Vol. 111, No. 13 ( 2017-09-25)
    Abstract: Spin valve devices, consisting of a free magnetic layer, a spacer layer, and a pinned magnetic layer, are widely used in magnetic sensors and nonvolatile magnetic memories. However, even a slight bending deformation can affect the magnetization direction of the free magnetic layer, which will change the magnetoresistance signal of the devices. Therefore, it is a challenge to develop a flexible spin valve device with controllable performance. Here, an enhanced stress-invariance of the magnetization direction in amorphous CoFeB magnetic films on flexible polyimide substrates is achieved. The uniaxial anisotropy is induced by growing on the bent substrate under a magnetic field, which aligns more magnetic domains with easy axes along the direction perpendicular to the subsequently applied stress. Theoretical calculations indicate that pre-induced anisotropy with an easy axis perpendicular to the applied stress effectively resists the change in the magnetization direction during bending. These results are of importance for realizing better performance of flexible spin valve devices and the development of flexible spintronics.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
    In: Applied Physics Letters, AIP Publishing, Vol. 122, No. 23 ( 2023-06-05)
    Abstract: High-performance electro-optic (EO) crystals play a key role in optical communication and information processing. Potassium tantalate niobate (KTa1−xNbxO3, KTN) crystals advantageously have an ultrahigh quadratic electro-optic (QEO) coefficient and a wide transparency range, and their excellent QEO properties are closely related to polar nanoregion (PNR)-related polar units. Owing to the PNR-related polar units, KTN crystals have excellent strain properties, which makes them a potential multifunctional material. However, the relationship between strain behavior and QEO properties in nanodisordered KTN crystals has rarely been reported. The promotion of EO activity by regulating the PNRs-related polar units still needs to be studied. Here, we study the coupling effect of strain behavior and QEO properties in KTN crystals. The QEO, elastic-optic, electrostrictive, and elastic coefficients of KTN crystals are characterized, and the strain–QEO property coupling relation is established. The results show that the strain-induced QEO response significantly affects the QEO properties. The existence and response of PNRs near ferroelectric–paraelectric phase transition are demonstrated by variable-temperature x-ray diffraction and Raman spectroscopy. Combined with the heating and cooling QEO response time tests, the response of PNRs is shown to be an important reason for the enhancement of the QEO response of KTN crystals through the promotion of the strain-induced QEO response. This study provides guidance for clarifying the origin of the QEO properties of nanodisordered KTN crystals and is beneficial for further improving the EO properties of perovskite crystals by manipulating the strain behavior.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 7
    Online Resource
    Online Resource
    AIP Publishing ; 2022
    In:  Journal of Mathematical Physics Vol. 63, No. 11 ( 2022-11-01)
    In: Journal of Mathematical Physics, AIP Publishing, Vol. 63, No. 11 ( 2022-11-01)
    Abstract: Consider a normally degenerate Hamiltonian system with the following Hamiltonian H(θ,I,x,y,ϵ)=ω,I+λxn+1n+1+y22+ϵP(θ,x,y),(θ,I,x,y)∈Td×Rd+2, which is associated with the standard symplectic form dθ ∧ dI ∧ dx ∧ dy, where 0≠λ∈R and n & gt; 1 is an integer. The existence of response tori for the degenerate Hamiltonian system has already been proved by Si and Yi [Nonlinearity 33, 6072–6098 (2020)] if [∂P(θ,0,0)∂x] satisfies some non-zero conditions, see condition (H) in the work of Si and Yi [Nonlinearity 33, 6072–6098 (2020)], where [·] denotes the average value of a continuous function on Td. However, when [∂P(θ,0,0)∂x]=0, no results were given by Si and Yi [Nonlinearity 33, 6072–6098 (2020)] for response tori of the above system. This paper attempts at carrying out this work in this direction. More precisely, with 2p & lt; n, if P satisfies [∂jP(θ,0,0)∂xj]=0 for j = 1, 2, …, p and either λ−1[∂p+1P(θ,0,0)∂xp+1] & lt;0 as n − p is even or λ−1[∂p+1P(θ,0,0)∂xp+1]≠0 as n − p is odd, we obtain the following results: (1) For λ̃ & lt;0 [see λ̃ in (2.1)] and ϵ sufficiently small, response tori exist for each ω satisfying a Brjuno-type non-resonant condition. (2) For λ̃ & gt;0 and ϵ* sufficiently small, there exists a Cantor set E∈(0,ϵ*) with almost full Lebesgue measure such that response tori exist for each ϵ∈E if ω satisfies a Diophantine condition. In the case where λ−1[∂p+1P(θ,0,0)∂xp+1] & gt;0 and n − p is even, we prove that the system admits no response tori in most regions. The present paper is regarded as a continuation of work by Si and Yi [Nonlinearity 33, 6072–6098 (2020)].
    Type of Medium: Online Resource
    ISSN: 0022-2488 , 1089-7658
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 1472481-9
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  • 8
    In: Journal of Applied Physics, AIP Publishing, Vol. 126, No. 16 ( 2019-10-28)
    Abstract: A physical insight into the capture and emission behavior of interface/oxide states in a GaN-based metal-oxide-semiconductor (MOS) structure is of great importance to understanding the threshold voltage (VTH) instability in GaN power transistors. A time-dependent VTH shift in Ni/Al2O3/AlGaN/GaN MOS-HFETs (heterojunction field-effect transistors) and a distribution of Al2O3/III-nitride interface states (Dit) were successfully characterized by constant-capacitance deep level transient spectroscopy. It is found that in situ remote plasma pretreatments in plasma-enhanced atomic-layer-deposition could suppress Dit (EC-ET  & gt; 0.4 eV) down to below 1.3 × 1012 cm−2 eV−1. Under high applied gate bias (e.g., VG  & gt; 8 V), tunnel filling of oxide states in the Al2O3 dielectric comes into play, contributing to remarkable VTH instability in the MOS-HFETs. The tunnel distance between the 2D Electron Gas (2DEG) channel and oxide states ET,ox in the Al2O3 dielectric decreases from 3.75 to 0.82 nm as VG increases from 2 to 8 V. A further increase of VG to 11 V makes the Fermi level approach ET,ox (EC  −  ET ∼ 1.62 eV), which may enable direct filling. High electric field induced tunnel filling of gate oxide states could be an assignable cause for VTH instability in normally-OFF III-nitride MOS-HFETs.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 9
    In: Applied Physics Letters, AIP Publishing, Vol. 118, No. 9 ( 2021-03-01)
    Abstract: A silicon nitride (SiNx) film deposited at 500 °C by plasma-enhanced atomic layer deposition (PEALD) is employed as the gate dielectric for GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). An interface enhancement technology featuring in situ low-damage NH3/N2 remote plasma pretreatments (RPPs) is developed prior to the SiNx gate dielectric deposition, which contributes to an improved surface morphology while remarkably suppressed interface oxides. It is revealed by constant-capacitance deep-level transient spectroscopy that both shallow and deep states at the PEALD-SiNx/III-nitride interface are reduced by about one order of magnitude by the RPP. The in situ RPP and PEALD-SiNx gate dielectric process are implemented into fabrication of enhancement-mode MIS-HEMTs on an ultrathin-barrier AlGaN/GaN heterostructure technology platform. The fabricated MIS-HEMTs deliver an improved threshold stability and maximum output current as compared with devices without the RPP.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 10
    In: Journal of Applied Physics, AIP Publishing, Vol. 106, No. 4 ( 2009-08-15)
    Abstract: The behavior of p-type conductivity in Mn-doped TiO2 films grown on LaAlO3 substrates by plasma-assisted molecular beam epitaxy has been investigated. Raman scattering, x-ray photoelectron spectroscopy, and x-ray diffraction studies indicate that the films are single phase, and Mn is successfully doped into the TiO2 matrix. Semiconducting behavior with p-type carriers was confirmed by Hall-effect measurements. The structural and electrical investigations demonstrate that the ferromagnetism observed at room temperature is an intrinsic property of the Mn:TiO2 films, and does not originate from any secondary phase. The magnetic properties of Ti1−xMnxO2 might be related to the formation of acceptor bound magnetic polarons, in which the spins of the holes and manganese are aligned via exchange interaction.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2009
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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