In:
Nanotechnology, IOP Publishing, Vol. 31, No. 20 ( 2020-05-15), p. 205201-
Abstract:
We present a systematic study on the effects of CF 4 plasma immersion ion implantation (PIII) in Si on the phase evolution of ultra-thin Ni silicides. For 3 nm Ni, NiSi 2 was formed on Si substrates with and without CF 4 PIII at temperature as low as 400 °C. For 6 nm Ni, NiSi was formed on pure Si, while epitaxial NiSi 2 was obtained on CF 4 PIII Si. The incorporation of C and F atoms in the thin epitaxial NiSi 2 significantly reduces the layer resistivity. Increasing the Ni thickness to 8 nm results in the formation of NiSi, where the thermal stability of NiSi, the NiSi/Si interface and Schottky contacts are significantly improved with CF 4 PIII. We suggest that the interface energy is lowered by the F and C dopants present in the layer and at the interface, leading to phase evolution of the thin Ni silicide.
Type of Medium:
Online Resource
ISSN:
0957-4484
,
1361-6528
DOI:
10.1088/1361-6528/ab6d21
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2020
detail.hit.zdb_id:
1362365-5
SSG:
11
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