In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 4R ( 2012-04-01), p. 045701-
Kurzfassung:
We investigated the effects of post O 3 feeding treatment and pre–post O 2 plasma treatment on HfO 2 dielectric films in the metal/insulator/metal (MIM) structure TiN/HfO 2 /TiN. The carbon contents of the HfO 2 films decreases with increasing O 3 feeding time, which leads to the improvement in leakage current. The O 2 plasma and O 3 feeding treatments produce Hf–Hf bonds in the bulk HfO 2 film and a Ti oxide layer at the film/bottom electrode and HfO 2 /TiN interface, which prevent the out diffusion of nitrogen into the HfO 2 layer. In addition, these treatments also create the local crystallization of HfO 2 at the interface. In the case of rapid thermal annealing of an actual dynamic random access memory (DRAM) structure, TiN/HfO 2 /Al 2 O 3 /HfO 2 /TiN, a local crystallization is also observed in the HfO 2 layer, which enhances leakage current.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.045701
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2012
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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