In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 4R ( 2004-04-01), p. 1330-
Abstract:
A novel broadband superluminescent diode (SLD), which has a symmetric graded tensile-strained bulk InGaAs active region, is developed. The symmetric-graded tensile-strained bulk InGaAs is achieved by changing the group III TMGa source flow only during its growth process by low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE), in which the much different tensile strain is introduced simultaneously. At 200 mA injection current, the full width at half maximum (FWHM) of the emission spectrum of the SLD can be up to 122 nm, covering the range of 1508–1630 nm, and the output power is 11.5 mW.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.1330
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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