In:
RSC Advances, Royal Society of Chemistry (RSC), Vol. 12, No. 3 ( 2022), p. 1278-1286
Abstract:
Transition metal dichalcogenides (TMDs) have received significant attention owing to their thickness-dependent folded current–voltage ( I ds – V ds ) characteristics, which offer various threshold voltage values. Owing to these astonishing characteristics, TMDs based negative differential resistance (NDR) devices are preferred for the realization of multi-valued logic applications. In this study, an innovative and ground-breaking germanium selenide/hafnium disulfide (p-GeSe/n-HfS 2 ) TMDs van der Waals heterostructure (vdWH) NDR device is designed. An extraordinary peak-to-valley current ratio (≈5.8) was estimated at room temperature and was used to explain the tunneling and diffusion currents by using the tunneling mechanism. In addition, the p-GeSe/n-HfS 2 vdWH diode was used as a ternary inverter. The TMD vdWH diode, which can exhibit different band alignments, is a step forward on the road to developing high-performance multifunctional devices in electronics.
Type of Medium:
Online Resource
ISSN:
2046-2069
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2022
detail.hit.zdb_id:
2623224-8
Bookmarklink