In:
Modern Physics Letters B, World Scientific Pub Co Pte Ltd, Vol. 31, No. 01 ( 2017-01-10), p. 1650430-
Abstract:
In this work, on-chip spiral inductors with back hollow structure have been prepared on the 500 [Formula: see text] thick silicon substrate with high resistivity [Formula: see text] . The silicon underneath the inductor region has been completely etched by deep etching process in order to reduce the substrate eddy current losses. Several types of square spiral on-chip inductors with different metal width (w) and line spacing (s) in the case of [Formula: see text] were fabricated. The experimental results are verified by FEM simulation using HFSS software. The results show that the Q-factor and self-resonance frequency of back hollow structure inductors are both enhanced compared with the conventional inductors. Furthermore, narrower width of coils for the on-chip spiral inductors with back hollow structure can result in higher Q-factor, inductance L and self-resonance frequency, which provide some important design guides for the fabrication of the high performance on-chip inductors.
Type of Medium:
Online Resource
ISSN:
0217-9849
,
1793-6640
DOI:
10.1142/S0217984916504303
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
2017
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