In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 7R ( 2011-07-01), p. 070204-
Abstract:
This letter reports the enhanced photovoltaic (PV) performance of Fe doped amorphous carbon (a-C) film/n-Si heterojunctions by depositing a thin Al 2 O 3 layer at the interface of a-C:Fe and Si substrate. We demonstrate that a thin Al 2 O 3 film at the interface of Fe-doped a-C/Si heterojunction allows significantly improving the devices' PV performances up to one order of magnitude under AM1.5 illumination. The enhancement of the PV effect on a-C:Fe/Al 2 O 3 /Si solar cells can be ascribed to the inserted Al 2 O 3 layer which increases the built-in electric field barrier and realizes interface passivation by use of suppressing the charge recombination, reducing the interface states.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.070204
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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