In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 3R ( 2001-03-01), p. 1222-
Abstract:
In this paper, an alternative approach for the extraction of effective channel length, L eff , using a modified capacitance–voltage ( C – V ) method [the capacitance–ratio ( C – R ) method], which considers depletion effect compensation is proposed. In general, we define L eff = L mask -Δ L , where Δ L is the sum of the polysilicon gate lithography bias and two times the overlap length of the polysilicon gate and source/drain (S/D) extension (Δ L = L pb +2 L ovlap ). Using the modified C – V method, more consistent and reasonable L eff data can be extracted as compared to those obtained using the newest current–voltage ( I – V ) method (shift and ratio method). In using the proposed C – R method, we can electrically measure the exact L pb and L ovlap numbers that can both be used as process monitor parameters. The within-wafer uniformities of L eff (or Δ L ), L pb and L ovlap have also been checked among devices of various sizes. After the L eff is extracted, a stable S/D resistance R sd , with V g independence, is determined and verified using the I – V method. The parasitic capacitance C gd is another extracted parameter that is as important as R sd in SPICE modeling for RF complementary metal-oxide-semiconductor (CMOS) applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.1222
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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