In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 56, No. 1 ( 2017-01-01), p. 010304-
Abstract:
To realize high thermoelectric performance, it was tried to control both high electrical conductivity (σ) and low thermal conductivity ( K ) for the Sn-doped indium–zinc oxide films prepared by DC magnetron sputtering. The highest power factor was obtained post-annealed at 200 °C due to the highest σ. However, the highest figure of merit was obtained annealed at 500 °C. It could be attributed to both amorphous structure with low K by phonon and the highest Hall mobility. Thermoelectric and electrical properties of the film could be controlled by both heat treatment and Sn doping with high bond enthalpy.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.56.010304
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2017
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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