In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 45, No. 11R ( 2006-11-01), p. 8542-
Abstract:
The average and local lattice structures of a strained-Si layer and a SiGe layer epitaxially grown on a [001]-oriented Si wafer are evaluated by means of high-resolution X-ray diffractometry using a usual X-ray beam and a highly parallel synchrotron X-ray microbeam. Lattices in the constant composition of the SiGe (CC) layer are greatly disarranged mainly due to an anisotropic lattice tilt feature with respect to the [110] and [110] directions in the surface plane. Although the crystallinity of the strained-Si layer was found to follow directly that of lattice tilt variations in the CC layer, the lattice parameter of the strained-Si layer still has the expected value.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.45.8542
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2006
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Bookmarklink