In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 26, No. 9R ( 1987-09-01), p. 1408-
Kurzfassung:
The light-induced effect of a-Si films with low impurity concentrations fabricated in the super chamber was investigated. It was confirmed that a reduction of impurity reduces the light-induced effect over a range of more than 10 18 cm -3 for oxygen. Furthermore, other factors come to have an influence on the light-induced effect in the low-impurity region. We believe that there are at least two types of light-induced defects, one related to impurities, which may be located below the midgap, and one related to structural properties, which may be located around the midgap. For a further reduction of the light-induced degradation in a-Si films, it is necessary to reduce the impurities in a-Si films and to suppress the creation of dangling bonds around the midgap.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.26.1408
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1987
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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