In:
Physica Scripta, IOP Publishing, Vol. 99, No. 9 ( 2024-09-01), p. 095504-
Abstract:
In the present study, both metal/semiconductor (MS) and metal/polymer/semiconductor (MPS) Schottky Diodes (SDs) were grown onto the same n-Si wafer to compare their electrical and optical characteristics. Firstly, ZnO and CeO 2 nanostructures were synthesized by ultrasonic-assisted method (UAM), and structurally characterized by utilizing x-ray diffraction (XRD), Ultraviolet-visible spectroscopy (UV–vis), and Fourier-Transform-IR (FTIR) methods. The mean submicron crystallite sizes were estimated to be below 11.39 nm for CeO 2 and 54.37 nm for ZnO nanostructures through the Debye–Scherrer method. The optical bandgap was calculated as 3.84 eV for CeO 2 and 3.88 eV for ZnO nanostructures via Tauc plot. Electrical parameters such as reverse-saturation current (Io), ideality-factor (n), zero-bias barrier height (Φ Bo ), and rectification-ratio (RR) were found as 0.596 μ A, 5.45, 0.64 eV, 2.74 × 10 5 in dark and 5.54 μ A, 5.88, 0.59 eV, 8.60 × 10 3 under illumination for the MS SD and 0.027 μ A, 4.36, 0.72 eV, 1.85 × 10 7 in dark and 0.714 μ A, 5.18, 0.64 eV, 7.61 × 10 4 under illumination for the MPS SD, respectively. The energy-dependent profile of surface-states was obtained via the Card-Rhoderick method, by considering Φ B (V) and n. RR of the MPS SD is almost sixty-seven times the RR of the MS SD in the dark. The sensitivity of the MPS SD (=710) is nineteen and five-tenths the sensitivity of the MS SD (=36.4), so the MPS SD is considerably more sensitive to illumination. These results indicate that the (ZnO:CeO 2 :PVP) organic interlayer significantly improves the performance of the MS SD.
Type of Medium:
Online Resource
ISSN:
0031-8949
,
1402-4896
DOI:
10.1088/1402-4896/ad60fb
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2024
detail.hit.zdb_id:
1477351-X
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