In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3R ( 1997-03-01), p. 1083-
Abstract:
Tunnel metal-insulator-semiconductor (MIS) SnO 2 –nSi solar cells were made by oxidizing (100) and (111) Si substrates at various oxidation temperatures and times, and by spray-depositing SnO 2 to the surface. Open-circuit voltage V oc decreases with increasing oxidation temperature, and the cells made on (100) Si have higher V oc than those on (111) Si which were made under the same oxidation conditions. V oc is related to the n -factor and effective barrier height. The n -factor increases linearly with increase of the density of surface states D ss , while the effective barrier height decreases slowly with increase of D ss . For the improvement of V oc , it is effective to increase D ss . Experimental results support the theoretical prediction. When the oxidation temperature decreases, D ss increases, which results in an increase of the n -factor and V oc . The (100) solar cell has a higher V oc than the (111) cell because it has a higher D ss .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.1083
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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