In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 1S ( 1993-01-01), p. 438-
Abstract:
A method for growing the high-quality strained epitaxial heterostructure of Si/Si 1- x Ge x /Si by low-pressure chemical vapor deposition (CVD) and the fabrication of Si 1- x Ge x -channel metal-oxide-semiconductor field-effect transistors (MOSFET's) with a high Ge fraction layer have been investigated. It is found that lowering of the deposition temperature of the Si 1- x Ge x and Si capping layers is necessary with increasing Ge fraction in order to prevent island growth of the layers. With the use of the optimized fabrication process, Si/Si 1- x Ge x /Si heterostructures with flat surfaces and interfaces were realized, and a high-performance Si 0.5 Ge 0.5 -channel MOSFET has been achieved with a large mobility enhancement of about 70% at 300 K and over 150% at 77 K compared with that of a MOSFET without a Si 1- x Ge x channel.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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