In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 7S ( 1994-07-01), p. 4165-
Abstract:
Infrared diode laser absorption spectroscopy was used to measure the density of silyl ( SiH 3 ) radicals in low-pressure (4.0 Pa) 13.56-MHz rf plasmas utilizing H 2 /, He/, Ar/, and Xe/SiH 4 gas mixtures. The SiH 3 production frequency per SiH 4 molecule was also derived from the SiH 3 density and its decay rate in the afterglow. The observed SiH 3 density decreased with increasing dilution ratio in all the gas mixtures, but the SiH 3 production frequency per SiH 4 molecule increased significantly for Xe dilution and remained nearly constant for H 2 , He, and Ar dilution. Based on these results, the relative importance of different SiH 3 production channels is discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.4165
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Bookmarklink