In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 61, No. SM ( 2022-10-01), p. SM1013-
Abstract:
The results of the experimental investigation of the relationship between the low-frequency noise spectrum of the electric current through conducting filaments in Si 3 N 4 films with a thickness of 6 nm on n ++ -Si(001) conducting substrates and retention characteristics of these filaments are reported. Two structures are investigated: Si 3 N 4 /Si, thin (about 6 nm) Si 3 N 4 film on the n ++ -Si substrate; Si 3 N 4 /SiO 2 /Si, a similar structure with a 2 nm SiO 2 sublayer between the film and the substrate. A detailed comparison of the experimentally extracted parameters, such as average current through the filament, probability density function, and spectrum, is presented with a discussion of possible physical reasons for the difference between the testing structures and their effect on retention characteristics.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/ac7bf6
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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