In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 4S ( 2010-04-01), p. 04DA06-
Abstract:
It is well-known that the coimplantation of carbon (C) in a concentration range comparable to the range of boron (B) concentrations could suppress B diffusion, resulting in a boxlike B profile. Substitutional C atoms can capture excess self-interstitial Si atoms and suppress the diffusion of ion-implanted intersitial-type dopants such as B in silicon (Si). However, the effect of C on activation properties in wide C and B concentration ranges has not been sufficiently investigated. In this work, in the experiment in wide C and B concentration ranges, it was clarified for the first time that the B activation ratio of Si increases or decreases varies depending on the concentration of C incorporated. The activation ratio of the B activation layer was increased markedly by C incorporation in the case of light B implantation such as in the concentration range of 8×10 19 to 3×10 20 cm -3 . This might be attributed to the interaction of C with Si interstitials and the suppression of the boron Si-interstitial clustering induced by C incorporation. In contrast, in the case of heavy B implantation such as at a 1×10 21 cm -3 concentration, the activation ratio was decreased slightly by C incorporation. When stable B-containing clusters and precipitates were formed at high B concentrations, the effect of C incorporation on activation ratio was considered to be small.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.04DA06
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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