In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 10A ( 1995-10-01), p. L1254-
Abstract:
We fabricated a small-area metal (CoSi 2 )/insulator (CaF 2 ) hot electron transistor using electron-beam lithography. The transistor is composed of a CoSi 2 /CaF 2 (1.9 nm)/CoSi 2 (1.9 nm) tunnel emitter and a CaF 2 (5 nm) collector barrier on an n-Si(111) substrate. The emitter mesa area is 0.9 × 0.9 µm 2 . Although the measured characteristics show, for the first time, clear transistor action with a curve similar to those of semiconductor HETs, the collector current increases without saturation due to leakage current through the SiO 2 film under the external electrode pads. The intrinsic device characteristics (zero leakage current) exhibited saturation, and a current gain β ≥ 36 was obtained at 77 K.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.L1254
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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