In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 9S ( 2001-09-01), p. 5706-
Abstract:
A 3 Nb 1- x Ga 3+(5/3) x Si 2 O 14 (ANGS, A=Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (µ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the µ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr 3 NbGa 3 Si 2 O 14 (SNGS) and Ca 3 NbGa 3 Si 2 O 14 (CNGS) the single crystals showed that they were isostructural to that of A 3 BC 3 D 2 O 14 , which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a =8.282, 8.087 and c =5.073, 4.980 Å, respectively. The defect distribution and piezoelectric properties of these crystals were measured.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.5706
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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