In:
Physica Scripta, IOP Publishing, Vol. 98, No. 1 ( 2023-01-01), p. 015503-
Abstract:
We report a numerical analysis of the variation of Aluminium (Al) composition in Al Gallium Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode (DUV-LED) and its effects on the carrier concentration, radiative recombination, and photoluminescence (PL). Three different structures with different Al compositions are compared and analyzed. The radiative recombination of the DUV-LED is less efficient due to the imbalance of carrier distribution. The findings show that the uniform electrons and holes distribution significantly improve the radiative recombination for structure with a thin step-shaped quantum well (QW). The simulated structure emits a wavelength of 302.874 nm, categorized in the ultraviolet-B (UV-B) spectrum. Our results imply that carrier uniformity in QW is required to enhance the light intensity of DUV-LED. Remarkably, the uniformity enhances the PL intensity drastically, at least six times higher than the first structure and twice higher than the second structure.
Type of Medium:
Online Resource
ISSN:
0031-8949
,
1402-4896
DOI:
10.1088/1402-4896/aca43f
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
1477351-X
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