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1

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Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs

Alexandru, Mihaela ; Banu, Viorel ; Vellvehi, Miguel ; [et al.]

Trans Tech Publications, Ltd. ; 2012

In: Materials Science Forum Vol. 711 ( 2012-1), p. 104-108

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In: Materials Science Forum, Trans Tech Publications, Ltd., Vol. 711 ( 2012-1), p. 104-108

Abstract: – 4H-SiC MESFET transistors are very attractive devices for high temperature application and communications. The JFET and MESFET transistors have a promising potential for integrated circuits able to operate at high temperature and harsh radiation environments, due to the superior electrical, mechanical and chemical proprieties of 4H-SiC. Progresses in the manufacturing of high quality SiC substrates open the possibility to new circuit applications.

Type of Medium: Online Resource

ISSN: 1662-9752

URL: Issue

URL: Article

DOI: 10.4028/www.scientific.net/MSF.711

DOI: 10.4028/www.scientific.net/MSF.711.104

Language: Unknown

Publisher: Trans Tech Publications, Ltd.

Publication Date: 2012

detail.hit.zdb_id: 2047372-2

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2

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Use of Finite Elements Analysis for a Weigh-in-Motion Sensor Design

Opitz, Rigobert ; Goanta, Viorel ; Carlescu, Petru ; [et al.]

MDPI AG ; 2012

In: Sensors Vol. 12, No. 6 ( 2012-05-25), p. 6978-6994

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In: Sensors, MDPI AG, Vol. 12, No. 6 ( 2012-05-25), p. 6978-6994

Type of Medium: Online Resource

ISSN: 1424-8220

URL: Article

DOI: 10.3390/s120606978

Language: English

Publisher: MDPI AG

Publication Date: 2012

detail.hit.zdb_id: 2052857-7

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3

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High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates

Alexandru, Mihaela ; Banu, Viorel ; Florentin, Matthieu ; [et al.]

Trans Tech Publications, Ltd. ; 2014

In: Materials Science Forum Vol. 778-780 ( 2014-2), p. 1130-1134

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In: Materials Science Forum, Trans Tech Publications, Ltd., Vol. 778-780 ( 2014-2), p. 1130-1134

Abstract: Due to our demonstrated stable Tungsten-Schottky barrier at elevated temperatures, and also thanks to our technological process maturity regarding SiC-Schottky contact fabrication, we have implemented the digital logic gates library adopting a normally-on MESFET topology. In this paper we present new experimental results showing the thermal behavior up to 300oC of 4H-SiC logic gates library, monolithically integrating normally-on MESFETs and epitaxial resistors. The implemented SiC devices are based on important CMOS features and are specially designed for large ICs device integration density.

Type of Medium: Online Resource

ISSN: 1662-9752

URL: Issue

URL: Article

DOI: 10.4028/www.scientific.net/MSF.778-780

DOI: 10.4028/www.scientific.net/MSF.778-780.1130

Language: Unknown

Publisher: Trans Tech Publications, Ltd.

Publication Date: 2014

detail.hit.zdb_id: 2047372-2

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4

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Studies on Floating Contact Press-Pack Diodes Surge Current Capability

Banu, Viorel ; Berthou, Maxime ; Montserrat, Josep ; [et al.]

Trans Tech Publications, Ltd. ; 2016

In: Materials Science Forum Vol. 858 ( 2016-5), p. 1053-1056

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In: Materials Science Forum, Trans Tech Publications, Ltd., Vol. 858 ( 2016-5), p. 1053-1056

Abstract: This work reports experimental results on surge current capability of press-pack SiC diodes: Schottky, JBS and PIN. Our investigation showed a strong improvement of electro-thermal performances of the surge current capability for the 5.5 kV JBS diodes by using press-pack encapsulation. The surge current failure analysis for the press-pack SiC diodes is described together with a simplified unidimensional model for the temperature evaluation at the failure point.

Type of Medium: Online Resource

ISSN: 1662-9752

URL: Issue

URL: Article

DOI: 10.4028/www.scientific.net/MSF.858

DOI: 10.4028/www.scientific.net/MSF.858.1053

Language: Unknown

Publisher: Trans Tech Publications, Ltd.

Publication Date: 2016

detail.hit.zdb_id: 2047372-2

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5

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Monolithic Integration of High Temperature Silicon Carbide Integrated Circuits

Alexandru, Mihaela ; Banu, Viorel ; Montserrat, Josep ; [et al.]

The Electrochemical Society ; 2013

In: ECS Meeting Abstracts Vol. MA2013-02, No. 25 ( 2013-10-27), p. 1944-1944

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In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2013-02, No. 25 ( 2013-10-27), p. 1944-1944

Abstract: Abstract not Available.

Type of Medium: Online Resource

ISSN: 2151-2043

URL: Article

DOI: 10.1149/MA2013-02/25/1944

Language: Unknown

Publisher: The Electrochemical Society

Publication Date: 2013

detail.hit.zdb_id: 2438749-6

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6

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Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Navarro, Luis A. ; Perpina, Xavier ; Godignon, Philippe ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2014

In: IEEE Transactions on Power Electronics Vol. 29, No. 5 ( 2014-05), p. 2261-2271

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In: IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers (IEEE), Vol. 29, No. 5 ( 2014-05), p. 2261-2271

Type of Medium: Online Resource

ISSN: 0885-8993 , 1941-0107

URL: Article

DOI: 10.1109/TPEL.2013.2279607

RVK:

ZG 1100

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2014

detail.hit.zdb_id: 2034323-1

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7

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Poster presentations

Aksu, Funda ; Topacoglu, Hakan ; Arman, Candan ; [et al.]

Springer Science and Business Media LLC ; 2009

In: Surgical and Radiologic Anatomy Vol. 31, No. S1 ( 2009-9), p. 95-229

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In: Surgical and Radiologic Anatomy, Springer Science and Business Media LLC, Vol. 31, No. S1 ( 2009-9), p. 95-229

Type of Medium: Online Resource

ISSN: 0930-1038 , 1279-8517

URL: Article

DOI: 10.1007/BF03371486

Language: English

Publisher: Springer Science and Business Media LLC

Publication Date: 2009

detail.hit.zdb_id: 1461974-X

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8

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SiC Integrated Circuit Control Electronics for High-Temperature Operation

Alexandru, Mihaela ; Banu, Viorel ; Jorda, Xavier ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2015

In: IEEE Transactions on Industrial Electronics Vol. 62, No. 5 ( 2015-5), p. 3182-3191

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In: IEEE Transactions on Industrial Electronics, Institute of Electrical and Electronics Engineers (IEEE), Vol. 62, No. 5 ( 2015-5), p. 3182-3191

Type of Medium: Online Resource

ISSN: 0278-0046 , 1557-9948

URL: Article

DOI: 10.1109/TIE.2014.2379212

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2015

detail.hit.zdb_id: 2027527-4

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9

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Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes

Brosselard, Pierre ; Camara, Nicolas ; Banu, Viorel ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2008

In: IEEE Transactions on Electron Devices Vol. 55, No. 8 ( 2008-08), p. 1847-1856

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In: IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE), Vol. 55, No. 8 ( 2008-08), p. 1847-1856

Type of Medium: Online Resource

ISSN: 0018-9383

URL: Article

DOI: 10.1109/TED.2008.926636

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2008

detail.hit.zdb_id: 2028088-9

detail.hit.zdb_id: 241634-7

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10

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Review, analysis, and performance evaluation of the most common four active methods for islanding detection in grid-connected photovoltaic systems

Barkat, Fadila ; Cheknane, Ali ; Guerrero, Josep M. ; [et al.]

Elsevier BV ; 2023

In: Electric Power Systems Research Vol. 214 ( 2023-01), p. 108909-

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In: Electric Power Systems Research, Elsevier BV, Vol. 214 ( 2023-01), p. 108909-

Type of Medium: Online Resource

ISSN: 0378-7796

URL: Article

DOI: 10.1016/j.epsr.2022.108909

Language: English

Publisher: Elsevier BV

Publication Date: 2023

detail.hit.zdb_id: 1502242-0

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Kooperativer Bibliotheksverbund

Berlin Brandenburg