In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 8B ( 2000-08-01), p. L841-
Abstract:
The surface morphology and gate oxide integrity was examined on wafers containing Artificial Crystal Originated Particles. The wafers were subjected to heat treatments, epitaxial silicon deposition and polishing. All treatments except
polishing result in a significant defect smoothening, or even in complete defect annihilation. On these wafers, the defects no longer degrade the gate oxide integrity. Polishing only smoothes convex defect edges, leading to a reduction of the leakage current with positive gate bias. The breakdown voltage remains nearly unaltered, implying that it is determined by the concave tip of the defect.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L841
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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