In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 4R ( 1994-04-01), p. 1793-
Abstract:
We have experimentally observed a dependence of the endurance characteristics of floating gate electrically erasable programmable read only memory (EEPROM) devices on the dose of the injector implant. With an increase in the implantation dose, the memory window closure is enhanced. This phenomenon is explained theoretically by calculating the change in threshold voltage and hence, the amount of charge injected through the tunnel oxide during write/erase cycles for different implantation doses in the injector region.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.1793
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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