In:
Journal of Applied Physics, AIP Publishing, Vol. 99, No. 8 ( 2006-04-15)
Abstract:
The observation of a kink effect in the output characteristic of an InSb∕AlInSb quantum well field effect transistor structure at low temperature (1.6K) is reported. The effect is strongly temperature dependent, and while just discernible at room temperature, it is greatly enhanced below ∼120K. At 1.6K strong hysteresis is observed in the (output) forward characteristic of the device when sweeping the drain bias up and down. Corresponding instability is also observed in the gate leakage current as a function of gate voltage. We explain the effect by comparing with Monte Carlo simulations, observing strong hole accumulation under the gate region of the device as a result of significant impact ionization in the drain region. This accumulation is enhanced compared to the more common InAs∕AlSb type II system, due to the fact that InSb∕AlInSb has a type I band alignment. This inhibits the loss of holes to the gate contact, a significant leakage mechanism in type II systems. We show that the extent of the hysteresis is a good measure of the charge accumulation under the gate region and estimate accumulation by examination of the hysteresis compared with the results of the Monte Carlo simulation.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2006
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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