In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 928 ( 2006)
Abstract:
Double-barrier insulator/Si/insulator nanostructures on Si(111) were prepared using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd 2 O 3 and the incorporation of epitaxial Si islands into single-crystalline Gd 2 O 3 . The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-0928-GG03-04
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2006
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