In:
Applied Physics Letters, AIP Publishing, Vol. 22, No. 8 ( 1973-04-15), p. 399-401
Abstract:
The sheet mobility of accumulated electrons on silicon has been determined by measuring the acoustoelectric current which accompanies the interaction between these electrons and piezoelectric surface waves on LiNbO3. The advantages of this method are (a) it is a direct mobility measurement (not requiring a knowledge of density), (b) the effect of surface states may be made negligible, (c) it is a zero-average applied-field measurement, (d) both majority- and minority-carrier mobilities may be measured on the same sample. By using high-resistivity (30 000 Ω cm) silicon with an accumulated surface, the sheet density was varied from 1.5×1010 to 5×1011 cm−2. Over this range the mobility was determined to vary from 1100 to 450 cm2/V sec, respectively.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1973
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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