In:
ECS Transactions, The Electrochemical Society, Vol. 33, No. 3 ( 2010-10-01), p. 299-305
Abstract:
New Metal/Insulator/Metal (MIM) capacitors using ZrN electrode and ALD-ZrO 2 dielectric were examined for future DRAM capacitor application. The leakage current density of the capacitors using ZrN bottom electrodes shows no degradation compared to the capacitors using TiN bottom electrodes. However, equivalent oxide thickness (Toxeq.) value of TIZ capacitor was increased about 60% compared to that of TIT capacitor. Although the calculating dielectric constant values of ZrO 2 on TiN and ZrN electrode showed no significant difference, the non-zero y-axis intersect around 5.5Aå from Toxeq. variation as a function of the physical thickness of the ZrO 2 films suggests an interfacial layer with the low dielectric constant at the interface. XRD and HRTEM image showed that an interfacial Zr 2 ON 2 layer was formed at the ZrN/ZrO 2 interface, which might contribute the Toxeq. increase of TIZ-ZrO 2 capacitor during the ALD-ZrO 2 deposition and rapid thermal anneal step.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2010
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