In:
Applied Physics Letters, AIP Publishing, Vol. 102, No. 8 ( 2013-02-25)
Abstract:
In this study, the carrier injection mechanism of gold and gadolinium oxide bi-nanocrystals (BNCs) with hafnium dioxide NC separation layer was investigated. Further, an N-shaped carrier injection curve was observed under positive gate bias. It is resulted from the hybrid polarity and carrier injection. To identify the injection, the activation energies of charge loss were analyzed, and it was found that the substrate-injected electrons and gate-injected holes were stored in the BNCs. The gate-injected carriers were trapped at the Au-NCs and HfO2 interface, exhibiting high-density ( & gt;2.45 × 1012 cm−2) and high-speed (∼μs) operation characteristics suitable for future use in flash memories.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2013
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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