In:
Journal of Applied Physics, AIP Publishing, Vol. 90, No. 9 ( 2001-11-01), p. 4847-4851
Abstract:
We synthesized phosphorus-doped and boron-doped emitters by using trimethylphosphite P(OCH3)3 and trimethylborate B(OCH3)3 as doping sources in a microwave plasma chemical vapor deposition system. Based on our experimental results from scanning electron microscopy and Raman spectra, there is much difference among undoped, phosphorus-doped, and boron-doped diamondlike material. In addition, doping both phosphorus and boron can enhance electric properties by reducing the turn-on voltage and can increase the emission current density. The turn-on voltages of undoped, boron-doped, and phosphorus-doped emitters in triode-type field emitter arrays are 15, 8, and 5 V, respectively. The emission currents of boron-doped and phosphorus-doped emitters are about 20 and 80 times larger than the undoped.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2001
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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