In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 5R ( 1995-05-01), p. 2266-
Abstract:
Thin oxides thermally grown in reactive-ion-etched (RIE) silicon substrates in N 2 O and diluted O 2 ambient have been studied. The microroughness of the oxide-silicon interface was investigated using a spectrophotometer, atomic force microscopy (AFM), and cross-sectional high-resolution electron microscopy (HRTEM). The microroughness is strongly dependent on the RIE conditions and the post etching treatments. Furthermore, oxidation-enhanced interface microroughness has been observed. As compared with the pure oxides grown in diluted oxygen, N 2 O-grown oxides exhibit stronger immunity to RIE-induced damage. N 2 O oxidation of the etched specimens treated with an after-treatment-chamber (ATC) process result in the best electrical properties.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.2266
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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