In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 27, No. 6 ( 2009-11-01), p. 1260-1265
Abstract:
Gallium-doped ZnO films were grown on p-Si(111) substrates by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using diethylzinc and water as reactant gases and triethyl gallium (TEG) as a n-type dopant gas. The structural, electrical, and optical properties of ZnO:Ga films obtained by varying the flow rate of TEG from 0.56to3.35μmol∕min were examined. X-ray diffraction patterns and scanning electron microscopy images indicated that Ga doping plays a role in forming microstructures in ZnO films. A flat surface with a predominant orientation (101) was obtained for the ZnO:Ga film fabricated at a flow rate of TEG=2.79μmol∕min. This film also revealed a lowest resistivity of 4.54×10−4Ωcm, as measured using the van der Pauw method. Moreover, low temperature photoluminescence (PL) emission recorded at 12K demonstrated the Burstein Moss shift of PL line from 3.365to3.403eV and a line broadening from 100to165meV as the TEG flow rate varied from 0.56to2.79μmol∕min. This blueshift behavior of PL spectra from ZnO:Ga films features the degeneracy of semiconductor, which helps to recognize the enhancing of transparency and conductivity of ZnO films fabricated by AP-MOCVD using Ga-doping technique.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2009
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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