In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 46, No. 8 ( 1997), p. 1605-
Abstract:
A 200nm Ti film was deposited on a polished mullite ceramic substrate at 200℃ by electron beam evaporation,and annealed under high vacuum conditions.Secondary ion mass spectrometry (SIMS),Auger electron spectroscopy (AES) and X-ray diffraction measurement (XRD) were employed to probe the solid interfacial reaction between Ti and mullite from 200—650℃ for the first time.The results show that the first deposited Ti atoms have formed Ti—O bond with O on mullite surface during the deposition,and trace elemental Al and Si atoms have been segregated,but interfacial range is very narrow.It was broadened a little after the sample annealed at 450℃ for an hour.Interfacial reaction happened violently when the annealing temperature was 650℃ for an hour,and the sample mainly consisted of four laminated structures which in turn were TiO+Ti,Ti3Al,Ti3Al+TiSi2 and mullite ceramic substrate.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1997
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