In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 53, No. 4S ( 2014-04-01), p. 04ED10-
Abstract:
This paper proposes a novel laterally conductive bridge random access memory (L-CBRAM) module using a fully CMOS logic compatible process. A contact buffer layer between the poly-Si and contact plug enables the lateral Ti-based atomic layer to provide on/off resistance ratio via bipolar operations. The proposed device reached more than 100 pulse cycles with an on/off ratio over 10 and very stable data retention under high temperature operations. These results make this Ti-based L-CBRAM cell a promising solution for advanced embedded multi-time programmable (MTP) memory applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.53.04ED10
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2014
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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