In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 6R ( 1994-06-01), p. 3402-
Abstract:
Excellent silicided shallow p + n junctions have been successfully achieved by the implantation of BF 2 + ions into thin Pd films on a Si substrate to a dose of 5×10 15 cm -2 and subsequent low-temperature (as low as 500° C) furnace annealing. The formed junctions have been characterized for the respective implantation conditions. In this experiment, the implant energy plays the key role in obtaining a low leakage diode. Reverse current density of about 1 nA/cm 2 and the ideality factor of about 1.03 can be attained by the implantation of BF 2 + ions at 100 keV and subsequent annealing at 600° C. The junction depth is about 0.08 µm, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF 2 + ions into a thin Pd layer can stabilize the Pd silicide film and prevent it from forming islands during high-temperature annealing. High-temperature stability of palladium silicides and the leakage current mechanism are also discussed in this report.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.3402
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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