In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 26, No. 3 ( 2008-05-01), p. 956-958
Abstract:
In this article, we report the growth of InAs∕GaAs quantum dots (QDs) grown under different As4-supply procedures. The growth of the investigated samples carried out by the three procedures of As shutter always opened, As shutter initially opened, and As shutter initially closed. The samples grown by the former two approaches show a uniform QD distribution and the multiple-peak luminescence, which correspond to ground-state, first-excited-state, and second-excited-state luminescence, while that grown by the latter only shows large InAs islands. The results suggest that the As-stabilized condition at the initial stage of QD growth is very critical for the high-quality QD formation.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2008
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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