In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 24, No. 4 ( 2006-07-01), p. 1922-1924
Abstract:
The first demonstration of InAs∕GaAs quantum-dot (QD) resonant-cavity light-emitting diode (RCLED) operating at 1.32μm at room temperature is reported. A single-layer InAs QDs inserted in GaAs matrix as the active medium was grown by metalorganic chemical vapor deposition. The bottom and top mirrors of QD RCLEDs were fabricated by employing epitaxial AlGaAs∕GaAs pairs and one dielectric SiO2∕Si3N4 pair as distributed Bragg reflectors (DBRs), respectively. As compared to the nonresonant QD LEDs, the RCLEDs exhibit a forward voltage of 1.13V at 20mA, a peak wavelength of 1.318μm, a narrower full width at half maximum in the electroluminescent spectrum of 14meV at 20mA, a high Q factor of 73.9, a low redshift rate with injection current of 0.033nm∕mA, and a higher light-output power of 28μW at 100mA.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2006
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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