In:
Journal of Applied Physics, AIP Publishing, Vol. 129, No. 16 ( 2021-04-28)
Abstract:
In focus of this report are the mechanisms of formation, propagation, and interaction of growth defects in heteroepitaxial diamond films along with their impact on the optical emission properties of N- and Si-vacancy (NV and SiV) color centers. Here, we analyze and discuss the properties of incoherent grain boundaries (IGBs) and extended defects in a nitrogen- and boron-doped heterodiamond nucleated and grown on Ir(001) via bias-enhanced nucleation and chemical vapor deposition techniques. We show that the low-angle IGBs alter the structural and optical emission properties of NV and SiV complexes by subduing NV emission and supporting the formation of interstitial Si-vacancy complexes dominating in the faulted IGB regions. We also demonstrate that the IGB-confined threading dislocations are responsible for the vertical transport and incorporation of Si impurities in thick layers, leading to an enhanced SiV emission from the IGBs.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2021
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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