In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 3R ( 1994-03-01), p. 1243-
Abstract:
The first three-dimensional numerical device simulation of the novel in-plane-gated field-effect transistor with a quasi-one-dimensional electron channel is reported. Information about the electrical characteristics is obtained by a calculation of the output and the transfer behavior of the device on the basis of a classical drift-diffusion model. The quasi-one-dimensional current path is defined laterally by two thin insulating lines on a pseudomorphic, modulation-doped AlGaAs/InGaAs/GaAs heterostructure with a high-density two-dimensional electron gas. Gate leakage currents and a parasitic bypass current flow can be avoided by deep isolation lines and a modified cap layer sequence, respectively. High transconductance values are expected only for highly p -doped isolation regions. Room temperature operation of a single channel device is demonstrated with a measured transconductance of 18 µ S and a maximum current of above 0.11 mA.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.1243
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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