In:
Journal of Applied Physics, AIP Publishing, Vol. 115, No. 21 ( 2014-06-07)
Abstract:
An 85 nm-thick morphotropic PbZr0.52Ti0.48O3 (PZT) film grown epitaxially and [001]-oriented onto a SrTiO3-buffered Si-wafer is investigated using temperature dependent X-ray diffraction. Two phase transitions, at Trt ∼ 500 K and Tc ∼ 685 K, are evidenced and are attributed to structural phase transitions from monoclinic-like to tetragonal-like phase and from tetragonal to paraelectric phase, respectively. The stronger upper shift of Trt value with respect to the bulk one and the weakly affected Tc (Tc bulk ∼ 665 K) are explained assuming misfit strain changes when crossing Trt. This finding opens new perspectives for piezoelectric PZT films in harsh applications.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2014
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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