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1

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Shape staggering of midshell mercury isotopes from in-source laser spectroscopy compared with density-functional-theory and Monte Carlo shell-model calculations

Sels, S. ; Day Goodacre, T. ; Marsh, B. A. ; [et al.]

American Physical Society (APS) ; 2019

In: Physical Review C Vol. 99, No. 4 ( 2019-4-12)

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In: Physical Review C, American Physical Society (APS), Vol. 99, No. 4 ( 2019-4-12)

Type of Medium: Online Resource

ISSN: 2469-9985 , 2469-9993

URL: Article

DOI: 10.1103/PhysRevC.99.044306

RVK:

UA 6500.3.C

Language: English

Publisher: American Physical Society (APS)

Publication Date: 2019

detail.hit.zdb_id: 2844098-5

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2

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Measurement and comparison of individual external doses of high-school students living in Japan, France, Poland and Belarus—the ‘D-shuttle’ project—

Adachi, N ; Adamovitch, V ; Adjovi, Y ; [et al.]

IOP Publishing ; 2016

In: Journal of Radiological Protection Vol. 36, No. 1 ( 2016-03), p. 49-66

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In: Journal of Radiological Protection, IOP Publishing, Vol. 36, No. 1 ( 2016-03), p. 49-66

Type of Medium: Online Resource

ISSN: 0952-4746 , 1361-6498

URL: Article

DOI: 10.1088/0952-4746/36/1/49

Language: Unknown

Publisher: IOP Publishing

Publication Date: 2016

detail.hit.zdb_id: 2010389-X

SSG: 11

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3

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MBE Grown GaSb, AlSb Crystals High Pressure Electrical Characterisation

Konczewicz, L. ; Mercy, J-M. ; Robert, J-L. ; [et al.]

IOP Publishing ; 1993

In: Japanese Journal of Applied Physics Vol. 32, No. S1 ( 1993-01-01), p. 261-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. S1 ( 1993-01-01), p. 261-

Abstract: For growth of GaAlSb layers by MBE method, the new doping Ga 2 Se 3 and Ga 2 S 3 sources have been used for Se and S doping respectively. The electrical transport measurements (Hall effect and resistivity) were used to characterise the grown layers. For GaSb:S layer the role of the two-dimensional electron gas is demonstrated. The Se-donor states in AlSb have been studied and its ionization energy was found to be about 440 meV.

Type of Medium: Online Resource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.7567/JJAPS.32S1.261

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Language: Unknown

Publisher: IOP Publishing

Publication Date: 1993

detail.hit.zdb_id: 218223-3

detail.hit.zdb_id: 797294-5

detail.hit.zdb_id: 2006801-3

detail.hit.zdb_id: 797295-7

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4

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Characterization of the shape-staggering effect in mercury nuclei

Marsh, B. A. ; Day Goodacre, T. ; Sels, S. ; [et al.]

Springer Science and Business Media LLC ; 2018

In: Nature Physics Vol. 14, No. 12 ( 2018-12), p. 1163-1167

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In: Nature Physics, Springer Science and Business Media LLC, Vol. 14, No. 12 ( 2018-12), p. 1163-1167

Type of Medium: Online Resource

ISSN: 1745-2473 , 1745-2481

URL: Article

DOI: 10.1038/s41567-018-0292-8

Language: English

Publisher: Springer Science and Business Media LLC

Publication Date: 2018

detail.hit.zdb_id: 2206346-8

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5

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Author Correction: Characterization of the shape-staggering effect in mercury nuclei

Marsh, B. A. ; Goodacre, T. Day ; Sels, S. ; [et al.]

Springer Science and Business Media LLC ; 2022

In: Nature Physics Vol. 18, No. 2 ( 2022-02), p. 219-219

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In: Nature Physics, Springer Science and Business Media LLC, Vol. 18, No. 2 ( 2022-02), p. 219-219

Type of Medium: Online Resource

ISSN: 1745-2473 , 1745-2481

URL: Article

DOI: 10.1038/s41567-022-01503-4

Language: English

Publisher: Springer Science and Business Media LLC

Publication Date: 2022

detail.hit.zdb_id: 2206346-8

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6

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Electronic properties of vacancy–oxygen complex in Ge crystals

Markevich, V. P. ; Hawkins, I. D. ; Peaker, A. R. ; [et al.]

AIP Publishing ; 2002

In: Applied Physics Letters Vol. 81, No. 10 ( 2002-09-02), p. 1821-1823

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In: Applied Physics Letters, AIP Publishing, Vol. 81, No. 10 ( 2002-09-02), p. 1821-1823

Abstract: It is argued that the vacancy–oxygen (VO) complex (A center) in Ge has three charge states: double negative, single negative, and neutral. Corresponding energy levels are located at Ec−0.21 eV (VO−−/−) and Ev+0.27 eV (VO−/0). An absorption line at 716 cm−1 has been assigned to the asymmetrical stretching vibration mode of the doubly negatively charged VO complex.

Type of Medium: Online Resource

ISSN: 0003-6951 , 1077-3118

URL: Article

DOI: 10.1063/1.1504871

RVK:

UA 1000

Language: English

Publisher: AIP Publishing

Publication Date: 2002

detail.hit.zdb_id: 211245-0

detail.hit.zdb_id: 1469436-0

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7

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Radiation‐induced defects and their transformations in oxygen‐rich germanium crystals

Markevich, V. P. ; Litvinov, V. V. ; Dobaczewski, L. ; [et al.]

Wiley ; 2003

In: physica status solidi (c) , No. 2 ( 2003-02), p. 702-706

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In: physica status solidi (c), Wiley, , No. 2 ( 2003-02), p. 702-706

Type of Medium: Online Resource

ISSN: 1610-1634

URL: Issue

URL: Article

DOI: 10.1002/pssc.v0:2

DOI: 10.1002/pssc.200306214

Language: English

Publisher: Wiley

Publication Date: 2003

detail.hit.zdb_id: 2105580-4

detail.hit.zdb_id: 2102966-0

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8

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Laplace-transform deep-level transient spectroscopy studies of the G4 gold–hydrogen complex in silicon

Deixler, P. ; Terry, J. ; Hawkins, I. D. ; [et al.]

AIP Publishing ; 1998

In: Applied Physics Letters Vol. 73, No. 21 ( 1998-11-23), p. 3126-3128

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In: Applied Physics Letters, AIP Publishing, Vol. 73, No. 21 ( 1998-11-23), p. 3126-3128

Abstract: We have studied n-type silicon containing gold and gold–hydrogen complexes using high-resolution “Laplace” deep-level transient spectroscopy. This technique has enabled two quite distinct electron emission rates to be observed at temperatures between 240 and 300 K. These are associated with the gold acceptor and the level referred to as G4, which is observed when hydrogen and gold are present in silicon. The gold acceptor has a measured activation energy for electron emission of 558±8 meV, and the G4 state of 542±8 meV. The directly measured electron capture cross section for G4 is determined to be 0.6±0.1 σn(gold acceptor) at 275 K from which it is inferred that the state is acceptor-like.

Type of Medium: Online Resource

ISSN: 0003-6951 , 1077-3118

URL: Article

DOI: 10.1063/1.122694

RVK:

UA 1000

Language: English

Publisher: AIP Publishing

Publication Date: 1998

detail.hit.zdb_id: 211245-0

detail.hit.zdb_id: 1469436-0

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9

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Structure and properties of vacancy-oxygen complexes in Si 1 − x Ge x alloys

Markevich, V. P. ; Peaker, A. R. ; Coutinho, J. ; [et al.]

American Physical Society (APS) ; 2004

In: Physical Review B Vol. 69, No. 12 ( 2004-3-30)

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In: Physical Review B, American Physical Society (APS), Vol. 69, No. 12 ( 2004-3-30)

Type of Medium: Online Resource

ISSN: 1098-0121 , 1550-235X

URL: Article

DOI: 10.1103/PhysRevB.69.125218

RVK:

UA 6500.3.B

Language: English

Publisher: American Physical Society (APS)

Publication Date: 2004

detail.hit.zdb_id: 1473011-X

detail.hit.zdb_id: 2844160-6

detail.hit.zdb_id: 209770-9

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10

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Nuclear moments of indium isotopes reveal abrupt change at magic number 82

Vernon, A. R. ; Garcia Ruiz, R. F. ; Miyagi, T. ; [et al.]

Springer Science and Business Media LLC ; 2022

In: Nature Vol. 607, No. 7918 ( 2022-07-14), p. 260-265

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In: Nature, Springer Science and Business Media LLC, Vol. 607, No. 7918 ( 2022-07-14), p. 260-265

Type of Medium: Online Resource

ISSN: 0028-0836 , 1476-4687

URL: Article

DOI: 10.1038/s41586-022-04818-7

RVK:

TA 1000

RVK:

UA 1000

RVK:

WA 15000

Language: English

Publisher: Springer Science and Business Media LLC

Publication Date: 2022

detail.hit.zdb_id: 120714-3

detail.hit.zdb_id: 1413423-8

SSG: 11

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Kooperativer Bibliotheksverbund

Berlin Brandenburg