In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 24, No. 3 ( 2006-05-01), p. 1266-1270
Abstract:
A p-channel silicon-oxide-nitride-oxide-silicon (SONOS) flash memory device based on bulk fin shaped field effect transistor (FinFET) structure was fabricated and characterized as a highly scalable device structure. Key process steps were explained in detail and electrical characteristics were measured. The threshold voltage shift (ΔVth) was checked in the proposed device with the source/drain floating and grounded. This result means that the proposed device structure can be applicable to NAND and NOR flash memories. In this structure, program/erase times can be controlled by fin body width, which is the unique parameter of FinFET structure. In the endurance test, about 1.3V of the ΔVth was kept until 104P∕Ecycles. The ΔVth of the proposed flash memory device was extrapolated to about 0.5V after 10y retention. The ΔVth with crystal orientation of the side-channel also was checked.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2006
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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