In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 29, No. 2 ( 2011-03-01)
Abstract:
Piezoelectric aluminum nitride films were deposited onto 3 in. [0001] sapphire substrates by reactive mag netron sputtering to explore the possibility of making highly (002)-textured AlN films to be used in surface acoustic wave (SAW) devices for high temperature applications. The synthesized films, typically 1 μm thick, exhibited a columnar microstructure and a high c-axis texture. The relationship between the microstructures and process conditions was examined by x-ray diffraction (XRD), transmission electron microscopy, and atomic force microscopy analyses. The authors found that highly (002)-textured AlN films with a full width at half maximum of the rocking curve of less than 0.3° can be achieved under high nitrogen concentration and moderate growth temperature, i.e., 250 °C. The phi-scan XRD reveals the high in-plane texture of deposited AlN films. The SAW devices, based on the optimized AlN films on sapphire substrate, were characterized before and after an air annealing process at 800 °C for 90 min. The frequency response, recorded after the annealing process, confirmed that the thin films were still strong in a high temperature environment and that they had retained their piezoelectric properties.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2011
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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