In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 12R ( 2005-12-01), p. 8562-
Abstract:
MnSi layers in Ge-doped MnSi ∼1.7 increased with increasing Ge content up to x =0.00133, began to break at x =0.00265 and finally disappeared at x =0.00530. An experimental equation for the growth of MnSi was proposed for the interval between the MnSi layers and amount of doped Ge content. The crystallinity of Ge-doped MnSi ∼1.7 increased initially with increasing doped Ge content and saturated at high Ge content. Thermoelectric transport properties along the c -axis of Ge-doped MnSi ∼1.7 were measured as a function of Ge content at room temperature. Electrical conductivity and thermoelectric power of Ge-doped MnSi ∼1.7 were compared to those of Al-doped MnSi ∼1.7 in our previous work. A maximum in the electrical conductivity and a minimum in the thermoelectric power of Ge-doped MnSi ∼1.7 were observed at x =0.00133, reflecting a change in hole density which was influenced by the volume ratio of MnSi. Hole mobility depended on the existence of MnSi layers and/or of interfaces between MnSi ∼1.7 and MnSi and on the crystallinity of MnSi ∼1.7 . The thermal conductivity of Ge-doped MnSi ∼1.7 had a maximum at x =0.00053. The increase in thermal conductivity at low Ge doping can be explained by the increase in the amount of MnSi segregated in doped MnSi ∼1.7 , while the decrease at high Ge content was caused by the increase in phonon scattering of Ge. A maximum figure of merit of Ge-doped MnSi ∼1.7 was obtained at x =0.00974, reflecting a maximum power factor.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.8562
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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