In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 13, No. 4 ( 1995-07-01), p. 1582-1584
Abstract:
A modified molecular beam epitaxy technique has been used to grow single barrier GaAs/GaN/GaAs heterostructures of both n- and p-type. The temperature-dependent I(V) measurements show thermally activated conduction over the barrier above about 200 K. A Type I band alignment is indicated by significant offsets in both the conduction and valence bands at the GaAs/GaN heterointerface.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1995
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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