In:
Journal of Applied Physics, AIP Publishing, Vol. 95, No. 4 ( 2004-02-15), p. 2015-2019
Abstract:
III–V semiconductor GaP nanobelts were synthesized with a Fe2O3 catalyst on Si substrates by thermal evaporation at high temperatures. These nanobelts, typically, have a width from 50 to 600 nm and a length of up to several hundred micrometers. Their thickness varies from 10 to 40 nm. A vacancy ordering structure was observed near the edge of the GaP nanobelts. The vacancy ordering structure was analyzed using high-resolution transmission electron microscopy, electron diffraction patterns, and computer simulation. The unit cell of the vacancy ordering structure in the GaP belt is orthorhombic with lattice parameters a=3.767 Å, b=6.525 Å, c=18.456 Å, and α=β=γ=90°. In the [111] projection, the structure is a R3x3 120° superstructure, while in the [211] projection, it exhibits a superstructure in both the (1̄1̄3) and (1̄31̄) planes. This defective structure can also be visualized as a long period structure with a superstructure in the (111) stacking plane.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2004
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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