In:
Journal of Applied Physics, AIP Publishing, Vol. 102, No. 7 ( 2007-10-01)
Abstract:
Growth of m-plane GaN quantum nanostructures on an AlN buffer layer on m-plane SiC is investigated. GaN nanostructures with different shapes are obtained depending on the AlN buffer layer thickness and the amount of GaN deposited. For AlN buffer layer below 300nm, GaN quantum wires, elongated perpendicularly to the c axis, are obtained independently of the amount of GaN deposited. For buffer layer thickness above 300nm, and for an amount of GaN below (above) 5 ML (monolayer), GaN quantum dots (wires) are obtained. The difference in m-plane GaN morphology is related to the buffer layer stress state and to the anisotropic surface diffusion of m-plane GaN. Optical properties suggest an absence of internal quantum confined Stark effect.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
Bookmarklink
