In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 10, No. 2 ( 1992-03-01), p. 940-942
Abstract:
We have studied the effect of strain and strain relaxation on the band structure of Si1−xGex quantum wells. Two differently strained, molecular-beam epitaxy grown Si/Si1−xGex hole resonant tunneling structures were studied: one fully pseudomorphic structure, with the strain in the Si1−xGex well, and the other grown on a thick relaxed Si1−xGex buffer, with the strain in the Si barriers. For the latter structure transmission electron microscopy revealed a large threading dislocation density emanating from the buffer. Using angle-resolved magnetotunneling spectroscopy we found an anisotropy in the hole states in different in-plane 90° directions, that was not present in fully pseudomorphically grown structures. We suggest that this is due to anisotropic strain relaxation in the buffer layer.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1992
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
Bookmarklink