In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 6S ( 1997-06-01), p. 4216-
Abstract:
The range of negative characteristic temperatures in temperature dependences of threshold current density of low-threshold (In, Ga)As/(Al, Ga)As quantum dot injection lasers has been observed. A model describing the decrease in threshold current density with temperature at low temperatures is proposed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.4216
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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